IRG4PSH71KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Peak Reflow Temperature (Cel) :

250

Factory Lead Time :

7 Weeks

Gate Charge :

410nC

Switching Energy :

5.68mJ (on), 3.23mJ (off)

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

350W

Width :

5.3mm

Turn Off Time-Nom (toff) :

660 ns

Additional Feature :

LOW CONDUCTION LOSS

Mount :

Through Hole

REACH SVHC :

No SVHC

Number of Terminations :

3

Length :

16.0782mm

Current Rating :

78A

Height :

20.8mm

Polarity/Channel Type :

N-Channel

Test Condition :

800V, 42A, 5 Ω, 15V

Td (on/off) @ 25°C :

67ns/230ns

Reverse Recovery Time :

107 ns

Element Configuration :

Single

Mounting Type :

Through Hole

Gate-Emitter Thr Voltage-Max :

6V

Radiation Hardening :

No

Package / Case :

TO-274AA

Current - Collector Pulsed (Icm) :

156A

Turn On Time :

152 ns

Vce(on) (Max) @ Vge, Ic :

3.9V @ 15V, 42A

Power Dissipation :

350W

Termination :

Through Hole

Published :

1999

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

2.97V

Voltage - Rated DC :

1.2kV

Transistor Application :

Motor Control

Number of Pins :

3

Voltage - Collector Emitter Breakdown (Max) :

1200V

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

78A

Input Type :

Standard

Number of Elements :

1

Fall Time-Max (tf) :

190ns

Packaging :

Bulk

Collector Emitter Breakdown Voltage :

1.2kV

Rise Time :

84ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate-Emitter Voltage-Max :

20V

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

3.9V