IRG4PSH71KDPBF
- Mfr.Part #
- IRG4PSH71KDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- IRG4PSH71 - DISCRETE IGBT WITH A
- Stock
- 2
- In Stock :
- 2
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce(on) (Max) @ Vge, Ic :
- 3.9V @ 15V, 42A
- Gate-Emitter Thr Voltage-Max :
- 6V
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lead Free :
- Lead Free
- Switching Energy :
- 5.68mJ (on), 3.23mJ (off)
- RoHS Status :
- ROHS3 Compliant
- Gate Charge :
- 410nC
- Max Collector Current :
- 78A
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Current - Collector Pulsed (Icm) :
- 156A
- Width :
- 5.3mm
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 250
- Element Configuration :
- Single
- Turn On Time :
- 152 ns
- Turn Off Time-Nom (toff) :
- 660 ns
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2.97V
- Fall Time-Max (tf) :
- 190ns
- Transistor Application :
- Motor Control
- Radiation Hardening :
- No
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 84ns
- Length :
- 16.0782mm
- Current Rating :
- 78A
- Collector Emitter Voltage (VCEO) :
- 3.9V
- Packaging :
- Bulk
- Reverse Recovery Time :
- 107 ns
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Test Condition :
- 800V, 42A, 5 Ω, 15V
- Gate-Emitter Voltage-Max :
- 20V
- Termination :
- Through Hole
- Transistor Element Material :
- SILICON
- Published :
- 1999
- Power Dissipation :
- 350W
- Height :
- 20.8mm
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 350W
- Input Type :
- Standard
- Voltage - Rated DC :
- 1.2kV
- Td (on/off) @ 25°C :
- 67ns/230ns
- Package / Case :
- TO-274AA
- Factory Lead Time :
- 7 Weeks
- Number of Elements :
- 1
- Number of Pins :
- 3
- Additional Feature :
- LOW CONDUCTION LOSS
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IRG4PSH71KDPBF

IRG4PSH71KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PSH71KDPBF Description
The IRG4PSH71KDPBF is a bipolar transistor with an ultrafast soft recovery diode and an insulated gate. The HEXFREDTM diode has been tuned for use with IGBTs in order to reduce EMI, noise, and switching losses.
IRG4PSH71KDPBF Features
-
Maximum power density
-
High abort circuit rating IGBTs
-
Tightest parameter distribution
-
High current rating co-pack IGBT
-
Hole-less clip/pressure mount package
-
Creepage distance increased to 5.35mm
-
Minimum switching losses combined with low conduction losses
-
IGBT co-packaged with ultrafast soft recovery anti-parallel diode
IRG4PSH71KDPBF Applications
-
Alternative Energy
-
Power Management
-
Motor Drive & Control
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