IRG4PSC71UPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Voltage - Rated DC :

600V

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

200A

Collector Emitter Voltage (VCEO) :

2V

Mount :

Through Hole

ECCN Code :

EAR99

Case Connection :

COLLECTOR

Gate-Emitter Voltage-Max :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead, Lead Free

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 60A

Published :

1999

REACH SVHC :

No SVHC

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Turn On Delay Time :

34 ns

Max Power Dissipation :

350W

Number of Pins :

3

Number of Elements :

1

Number of Terminations :

3

Test Condition :

480V, 60A, 5 Ω, 15V

Transistor Application :

POWER CONTROL

Length :

16.0782mm

Turn Off Time-Nom (toff) :

304 ns

Collector Emitter Saturation Voltage :

2V

Height :

20.8mm

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

600V

Rise Time :

50ns

Radiation Hardening :

No

Packaging :

Bulk

Switching Energy :

420μJ (on), 1.99mJ (off)

Factory Lead Time :

22 Weeks

Input Type :

Standard

Turn-Off Delay Time :

56 ns

Package / Case :

TO-274AA

Width :

5.3mm

Td (on/off) @ 25°C :

34ns/56ns

Gate Charge :

340nC

Current Rating :

85A

Mounting Type :

Through Hole

Max Collector Current :

85A

Gate-Emitter Thr Voltage-Max :

6V

Additional Feature :

LOW CONDUCTION LOSS

Power Dissipation :

350W

Turn On Time :

79 ns

Transistor Element Material :

SILICON

Termination :

Through Hole