IRG4PSC71KDPBF
- Mfr.Part #
- IRG4PSC71KDPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- IGBT 600V 85A SUPER247
- Stock
- 7,576
- In Stock :
- 7,576
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Published :
- 1998
- Packaging :
- Bulk
- Turn-Off Delay Time :
- 282 ns
- Collector Emitter Voltage (VCEO) :
- 2.3V
- Turn On Delay Time :
- 82 ns
- Factory Lead Time :
- 13 Weeks
- Rise Time :
- 107ns
- Element Configuration :
- Single
- Current Rating :
- 85A
- Max Power Dissipation :
- 350W
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 60A
- Transistor Application :
- Motor Control
- REACH SVHC :
- No SVHC
- Length :
- 16.0782mm
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Width :
- 5.3mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Current - Collector Pulsed (Icm) :
- 200A
- Additional Feature :
- LOW CONDUCTION LOSS
- Package / Case :
- TO-274AA
- Mounting Type :
- Through Hole
- Turn Off Time-Nom (toff) :
- 517 ns
- Transistor Element Material :
- SILICON
- Termination :
- Through Hole
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 600V
- Switching Energy :
- 3.95mJ (on), 2.33mJ (off)
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 1.83V
- Turn On Time :
- 191 ns
- Test Condition :
- 480V, 60A, 5 Ω, 15V
- Voltage - Rated DC :
- 600V
- Input Type :
- Standard
- Td (on/off) @ 25°C :
- 82ns/282ns
- Gate Charge :
- 340nC
- Max Collector Current :
- 85A
- Polarity/Channel Type :
- N-Channel
- Reverse Recovery Time :
- 82 ns
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 20.8mm
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Mount :
- Through Hole
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 350W
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Datasheets
- IRG4PSC71KDPBF

IRG4PSC71KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PSC71KDPBF Description
The IRG4PSC71KDPBF is a bipolar transistor with an ultrafast soft recovery diode and an insulated gate. The HEXFREDTM diode has been tuned for use with IGBTs in order to reduce EMI, noise, and switching losses.
IRG4PSC71KDPBF Features
-
Maximum power density
-
High abort circuit rating IGBTs
-
Tightest parameter distribution
-
High current rating co-pack IGBT
-
Hole-less clip/pressure mount package
-
Creepage distance increased to 5.35mm
-
Minimum switching losses combined with low conduction losses
-
IGBT co-packaged with ultrafast soft recovery anti-parallel diode
IRG4PSC71KDPBF Applications
-
Alternative Energy
-
Power Management
-
Maintenance & Repair
-
Motor Drive & Control
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