IRG4PSC71KDPBF
- Mfr.Part #
- IRG4PSC71KDPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-274AA
- Datasheet
- Download
- Description
- IRG4PSC71 - DISCRETE IGBT WITH A
- Stock
- 7,576
- In Stock :
- 7,576
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Number of Elements :
- 1
- Rise Time :
- 107ns
- Mount :
- Through Hole
- Additional Feature :
- LOW CONDUCTION LOSS
- Published :
- 1998
- Transistor Application :
- Motor Control
- Collector Emitter Saturation Voltage :
- 1.83V
- Mounting Type :
- Through Hole
- Td (on/off) @ 25°C :
- 82ns/282ns
- Turn Off Time-Nom (toff) :
- 517 ns
- Turn On Time :
- 191 ns
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 60A
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Reverse Recovery Time :
- 82 ns
- Factory Lead Time :
- 13 Weeks
- Gate Charge :
- 340nC
- Polarity/Channel Type :
- N-Channel
- Max Collector Current :
- 85A
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 282 ns
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Current Rating :
- 85A
- Length :
- 16.0782mm
- Test Condition :
- 480V, 60A, 5 Ω, 15V
- JESD-609 Code :
- e3
- Termination :
- Through Hole
- Package / Case :
- TO-274AA
- Collector Emitter Voltage (VCEO) :
- 2.3V
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 600V
- Max Power Dissipation :
- 350W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 82 ns
- Number of Terminations :
- 3
- Current - Collector Pulsed (Icm) :
- 200A
- Height :
- 20.8mm
- Input Type :
- Standard
- Element Configuration :
- Single
- Packaging :
- Bulk
- Width :
- 5.3mm
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Power Dissipation :
- 350W
- Voltage - Rated DC :
- 600V
- Switching Energy :
- 3.95mJ (on), 2.33mJ (off)
- Case Connection :
- COLLECTOR
- Datasheets
- IRG4PSC71KDPBF

IRG4PSC71KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PSC71KDPBF Description
The IRG4PSC71KDPBF is a bipolar transistor with an ultrafast soft recovery diode and an insulated gate. The HEXFREDTM diode has been tuned for use with IGBTs in order to reduce EMI, noise, and switching losses.
IRG4PSC71KDPBF Features
-
Maximum power density
-
High abort circuit rating IGBTs
-
Tightest parameter distribution
-
High current rating co-pack IGBT
-
Hole-less clip/pressure mount package
-
Creepage distance increased to 5.35mm
-
Minimum switching losses combined with low conduction losses
-
IGBT co-packaged with ultrafast soft recovery anti-parallel diode
IRG4PSC71KDPBF Applications
-
Alternative Energy
-
Power Management
-
Maintenance & Repair
-
Motor Drive & Control
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