IRG4PH50UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Lead Free :

Contains Lead, Lead Free

RoHS Status :

ROHS3 Compliant

Turn Off Time-Nom (toff) :

570 ns

REACH SVHC :

No SVHC

Height :

20.3mm

Current Rating :

45A

Width :

5.3mm

Gate Charge :

160nC

Collector Emitter Saturation Voltage :

3.7V

Test Condition :

800V, 24A, 5 Ω, 15V

Number of Elements :

1

Termination :

Through Hole

Case Connection :

COLLECTOR

Voltage - Rated DC :

1.2kV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

110 ns

Element Configuration :

Single

Turn On Time :

73 ns

JEDEC-95 Code :

TO-247AC

JESD-609 Code :

e3

Power Dissipation :

200W

Number of Pins :

3

Transistor Application :

POWER CONTROL

Published :

2000

Package / Case :

TO-247-3

Collector Emitter Voltage (VCEO) :

3.7V

Current - Collector Pulsed (Icm) :

180A

Length :

15.875mm

ECCN Code :

EAR99

Max Power Dissipation :

200W

Packaging :

Bulk

Transistor Element Material :

SILICON

Additional Feature :

ULTRA FAST

Collector Emitter Breakdown Voltage :

1.2kV

Mount :

Through Hole

Turn On Delay Time :

47 ns

Mounting Type :

Through Hole

Input Type :

Standard

Max Collector Current :

45A

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

Vce(on) (Max) @ Vge, Ic :

3.7V @ 15V, 24A

Radiation Hardening :

No

Reverse Recovery Time :

90 ns

Td (on/off) @ 25°C :

47ns/110ns

Voltage - Collector Emitter Breakdown (Max) :

1200V

Switching Energy :

2.1mJ (on), 1.5mJ (off)

Rise Time :

24ns

Number of Terminations :

3