IRG4PH50SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Application :

POWER CONTROL

Factory Lead Time :

14 Weeks

Voltage - Collector Emitter Breakdown (Max) :

1200V

Max Junction Temperature (Tj) :

150°C

Number of Elements :

1

Rise Time :

29ns

Mounting Type :

Through Hole

Element Configuration :

Single

Td (on/off) @ 25°C :

32ns/845ns

Collector Emitter Voltage (VCEO) :

1.2kV

Weight :

38.000013g

Input Capacitance :

3.6nF

Lead Free :

Lead Free

Turn On Time :

62 ns

Length :

15.875mm

Width :

5.3mm

Input Type :

Standard

Continuous Collector Current :

57A

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

57A

Switching Energy :

1.8mJ (on), 19.6mJ (off)

RoHS Status :

ROHS3 Compliant

Current - Collector Pulsed (Icm) :

114A

Transistor Element Material :

SILICON

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

1.75V

Termination :

Through Hole

Collector Emitter Breakdown Voltage :

1.2kV

JEDEC-95 Code :

TO-247AC

Packaging :

Bulk

Package / Case :

TO-247-3

Number of Terminations :

3

ECCN Code :

EAR99

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 33A

REACH SVHC :

No SVHC

Power Dissipation :

200W

Test Condition :

960V, 33A, 5 Ω, 15V

Current Rating :

57A

Turn-Off Delay Time :

845 ns

Voltage - Rated DC :

1.2kV

Published :

2004

Mount :

Through Hole

Gate Charge :

167nC

Max Power Dissipation :

200W

Number of Pins :

3

Max Collector Current :

57A

Polarity/Channel Type :

N-Channel

Turn Off Time-Nom (toff) :

2170 ns

Height :

24.99mm

Case Connection :

COLLECTOR

Turn On Delay Time :

32 ns

Operating Temperature :

-55°C~150°C TJ