IRG4PH50S-EPBF

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Mfr.Part #
IRG4PH50S-EPBF
Manufacturer
International Rectifier
Package / Case
TO-247-3
Datasheet
Download
Description
IRG4PH50 - DISCRETE IGBT WITH AN
Stock
9
In Stock :
9

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Vce(on) (Max) @ Vge, Ic :
1.7V @ 15V, 33A
Case Connection :
COLLECTOR
Current - Collector Pulsed (Icm) :
114A
REACH SVHC :
No SVHC
Test Condition :
960V, 33A, 5 Ω, 15V
Terminal Position :
Single
Collector Emitter Saturation Voltage :
1.7V
Height :
20.7mm
Radiation Hardening :
No
Transistor Application :
POWER CONTROL
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Voltage (VCEO) :
1.7V
Package / Case :
TO-247-3
Collector Emitter Breakdown Voltage :
1.2kV
Switching Energy :
1.8mJ (on), 19.6mJ (off)
Number of Terminations :
3
Transistor Element Material :
SILICON
Factory Lead Time :
14 Weeks
Published :
2000
Packaging :
Tube
ECCN Code :
EAR99
Length :
15.87mm
Polarity/Channel Type :
N-Channel
Element Configuration :
Dual
Number of Pins :
3
Lead Free :
Lead Free
Td (on/off) @ 25°C :
32ns/845ns
RoHS Status :
RoHS Compliant
Turn On Time :
62 ns
JEDEC-95 Code :
TO-247AD
Max Collector Current :
57A
Mount :
Through Hole
Power Dissipation :
200W
Turn Off Time-Nom (toff) :
2170 ns
Max Power Dissipation :
200W
Voltage - Collector Emitter Breakdown (Max) :
1200V
Gate Charge :
167nC
Number of Elements :
1
Input Type :
Standard
Width :
5.3086mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Datasheets
IRG4PH50S-EPBF
Introducing Transistors - IGBTs - Single International Rectifier IRG4PH50S-EPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, IRG4PH50S-EPBF pinout, IRG4PH50S-EPBF datasheet PDF, IRG4PH50S-EPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRG4PH50S-EPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



IRG4PH50S-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4PH50S-EPBF Description

 

IRG4PH50S-EPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG4PH50S-EPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRG4PH50S-EPBF has the common source configuration.

 

 

IRG4PH50S-EPBF Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IRG4PH50S-EPBF Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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