IRG4PH50S-EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

1.2kV

Max Power Dissipation :

200W

Mount :

Through Hole

Td (on/off) @ 25°C :

32ns/845ns

Number of Elements :

1

Test Condition :

960V, 33A, 5 Ω, 15V

Turn On Time :

62 ns

Published :

2000

Collector Emitter Voltage (VCEO) :

1.7V

Turn Off Time-Nom (toff) :

2170 ns

RoHS Status :

RoHS Compliant

Max Collector Current :

57A

Height :

20.7mm

Case Connection :

COLLECTOR

Switching Energy :

1.8mJ (on), 19.6mJ (off)

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Power Dissipation :

200W

REACH SVHC :

No SVHC

Number of Pins :

3

Transistor Application :

POWER CONTROL

Collector Emitter Saturation Voltage :

1.7V

Radiation Hardening :

No

Gate Charge :

167nC

Polarity/Channel Type :

N-Channel

Number of Terminations :

3

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 33A

Input Type :

Standard

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-247AD

Element Configuration :

Dual

Lead Free :

Lead Free

Width :

5.3086mm

Current - Collector Pulsed (Icm) :

114A

Packaging :

Tube

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

1200V

Package / Case :

TO-247-3

Terminal Position :

Single

Length :

15.87mm

Factory Lead Time :

14 Weeks