IRG4PH50KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Reverse Recovery Time :

90 ns

Operating Temperature :

-55°C~150°C TJ

Gate-Emitter Thr Voltage-Max :

6V

Transistor Application :

Motor Control

Test Condition :

800V, 24A, 5 Ω, 15V

Voltage - Collector Emitter Breakdown (Max) :

1200V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time :

139 ns

Power Dissipation :

200W

Turn On Delay Time :

87 ns

Case Connection :

COLLECTOR

Width :

5.3mm

Additional Feature :

LOW CONDUCTION LOSS

Published :

2000

Voltage - Rated DC :

1.2kV

Collector Emitter Voltage (VCEO) :

3.5V

Mount :

Through Hole

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Max Collector Current :

45A

Number of Pins :

3

Td (on/off) @ 25°C :

87ns/140ns

Element Configuration :

Single

Gate Charge :

180nC

Collector Emitter Saturation Voltage :

2.77V

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Termination :

Through Hole

Length :

15.875mm

Vce(on) (Max) @ Vge, Ic :

3.5V @ 15V, 24A

Turn Off Time-Nom (toff) :

700 ns

Gate-Emitter Voltage-Max :

20V

Number of Terminations :

3

ECCN Code :

EAR99

Max Power Dissipation :

200W

Radiation Hardening :

No

Height :

20.3mm

Input Type :

Standard

Package / Case :

TO-247-3

Collector Emitter Breakdown Voltage :

1.2kV

Current Rating :

45A

Turn-Off Delay Time :

140 ns

Rise Time :

100ns

Switching Energy :

3.83mJ (on), 1.9mJ (off)

Factory Lead Time :

14 Weeks

Number of Elements :

1

Current - Collector Pulsed (Icm) :

90A

JEDEC-95 Code :

TO-247AC