IRG4PH40UPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Height :

20.3mm

Td (on/off) @ 25°C :

24ns/220ns

Switching Energy :

1.04mJ (on), 3.4mJ (off)

Collector Emitter Breakdown Voltage :

1.2kV

Rise Time :

18ns

Fall Time-Max (tf) :

190ns

Operating Temperature :

-55°C~150°C TJ

Voltage - Collector Emitter Breakdown (Max) :

1200V

Power Dissipation :

160W

REACH SVHC :

No SVHC

Additional Feature :

LOW CONDUCTION LOSS

Packaging :

Bulk

Current - Collector Pulsed (Icm) :

82A

Turn On Time :

49 ns

Voltage - Rated DC :

1.2kV

Published :

2000

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

160W

Mount :

Through Hole

JEDEC-95 Code :

TO-247AC

Test Condition :

960V, 21A, 10 Ω, 15V

Element Configuration :

Single

Gate-Emitter Voltage-Max :

20V

Collector Emitter Voltage (VCEO) :

3.1V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Max Collector Current :

41A

Gate Charge :

86nC

Case Connection :

COLLECTOR

Number of Pins :

3

Turn On Delay Time :

24 ns

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

3.1V @ 15V, 21A

Length :

15.875mm

Package / Case :

TO-247-3

Transistor Application :

POWER CONTROL

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Number of Terminations :

3

ECCN Code :

EAR99

Mounting Type :

Through Hole

Width :

5.3mm

Turn-Off Delay Time :

220 ns

Turn Off Time-Nom (toff) :

690 ns

Current Rating :

41A

Termination :

Through Hole

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

2.43V

Input Type :

Standard

Gate-Emitter Thr Voltage-Max :

3V