IRG4PH40UDPBF
- Mfr.Part #
- IRG4PH40UDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IRG4PH40U - 1200V ULTRAFAST 5-40
- Stock
- 12,924
- In Stock :
- 12,924
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Turn-Off Delay Time :
- 150 ns
- Switching Energy :
- 1.8mJ (on), 1.93mJ (off)
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-247-3
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Height :
- 20.7mm
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 14 Weeks
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Collector Emitter Saturation Voltage :
- 2.43V
- Test Condition :
- 800V, 21A, 10 Ω, 15V
- Transistor Application :
- POWER CONTROL
- Number of Elements :
- 1
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Vce(on) (Max) @ Vge, Ic :
- 3.1V @ 15V, 21A
- Td (on/off) @ 25°C :
- 46ns/97ns
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Power Dissipation :
- 160W
- Turn On Delay Time :
- 46 ns
- REACH SVHC :
- No SVHC
- Length :
- 15.87mm
- Turn On Time :
- 74 ns
- Rise Time :
- 59ns
- JEDEC-95 Code :
- TO-247AC
- Width :
- 5.3086mm
- Max Power Dissipation :
- 160W
- Packaging :
- Bulk
- Current Rating :
- 41A
- Published :
- 2004
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Turn Off Time-Nom (toff) :
- 750 ns
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate-Emitter Thr Voltage-Max :
- 6V
- Reverse Recovery Time :
- 63 ns
- Max Collector Current :
- 41A
- Current - Collector Pulsed (Icm) :
- 82A
- Termination :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 1.2kV
- Gate Charge :
- 86nC
- Mounting Type :
- Through Hole
- Gate-Emitter Voltage-Max :
- 20V
- Input Type :
- Standard
- Collector Emitter Voltage (VCEO) :
- 3.1V
- Datasheets
- IRG4PH40UDPBF

IRG4PH40UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PH40UDPBF Description
The IRG4PH40UDPBF is a 1200V Ultrafast 5 to 40kHz co-pack IGBT with a soft recovery diode. Hard switching process optimized for high operating frequency. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. HEXFRED diodes are optimized for performance and used in bridge configurations. The latest generation IGBT design and construction offers tighter parameters distribution and exceptional reliability. The IRG4PH40UDPBF is offered in the TO-247-3 package. It is specified for operation from –55°C to +150°C.
IRG4PH40UDPBF Features
-
UltraFast Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
-
The new IGBT design provides tighter parameter distribution and higher efficiency than previous generations
-
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
-
Industry-standard TO-247AC package
-
Lead-Free
IRG4PH40UDPBF Applications
-
Solar energy
-
Wind energy
-
Hydro energy
-
Tidal energy
-
Geothermal energy
-
Biomass energy
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