IRG4PH40UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

3.1V

Power Dissipation :

160W

Collector Emitter Breakdown Voltage :

1.2kV

Mount :

Through Hole

Td (on/off) @ 25°C :

46ns/97ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

41A

Switching Energy :

1.8mJ (on), 1.93mJ (off)

Gate Charge :

86nC

Rise Time :

59ns

Operating Temperature :

-55°C~150°C TJ

Test Condition :

800V, 21A, 10 Ω, 15V

REACH SVHC :

No SVHC

Number of Pins :

3

Voltage - Rated DC :

1.2kV

Current Rating :

41A

Turn Off Time-Nom (toff) :

750 ns

JEDEC-95 Code :

TO-247AC

Published :

2004

Max Power Dissipation :

160W

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Package / Case :

TO-247-3

Width :

5.3086mm

Vce(on) (Max) @ Vge, Ic :

3.1V @ 15V, 21A

Element Configuration :

Single

Turn-Off Delay Time :

150 ns

Mounting Type :

Through Hole

Termination :

Through Hole

Length :

15.87mm

Input Type :

Standard

Collector Emitter Saturation Voltage :

2.43V

Gate-Emitter Voltage-Max :

20V

Transistor Application :

POWER CONTROL

Packaging :

Bulk

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Radiation Hardening :

No

Voltage - Collector Emitter Breakdown (Max) :

1200V

Case Connection :

COLLECTOR

Number of Terminations :

3

Reverse Recovery Time :

63 ns

Height :

20.7mm

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

82A

Number of Elements :

1

Factory Lead Time :

14 Weeks

Turn On Time :

74 ns

Gate-Emitter Thr Voltage-Max :

6V

Turn On Delay Time :

46 ns

Additional Feature :

ULTRA FAST SOFT RECOVERY