IRG4PH40UD-EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Packaging :

Bulk

Turn Off Time-Nom (toff) :

750 ns

Turn On Time :

74 ns

Collector Emitter Voltage (VCEO) :

3.1V

Collector Emitter Saturation Voltage :

2.43V

Power Dissipation :

160W

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

1.2kV

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Input Type :

Standard

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

3.1V @ 15V, 21A

Rise Time :

35ns

Published :

2004

Collector Emitter Breakdown Voltage :

1.2kV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

160W

Number of Pins :

3

Package / Case :

TO-247-3

Test Condition :

800V, 21A, 10 Ω, 15V

Number of Elements :

1

Max Collector Current :

41A

JEDEC-95 Code :

TO-247AD

Number of Terminations :

3

Width :

5.3086mm

Reverse Recovery Time :

63 ns

Gate Charge :

86nC

Td (on/off) @ 25°C :

46ns/97ns

Factory Lead Time :

14 Weeks

Radiation Hardening :

No

Switching Energy :

1.8mJ (on), 1.93mJ (off)

Case Connection :

COLLECTOR

Height :

20.7mm

REACH SVHC :

No SVHC

Mount :

Through Hole

Additional Feature :

ULTRA FAST SOFT RECOVERY

Length :

15.87mm

Transistor Application :

POWER CONTROL

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Voltage - Collector Emitter Breakdown (Max) :

1200V

Current Rating :

41A

Lead Free :

Lead Free

Current - Collector Pulsed (Icm) :

82A