IRG4PH40KPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

3.4V

Voltage - Rated DC :

1.2kV

Factory Lead Time :

14 Weeks

Element Configuration :

Single

Current Rating :

30A

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

Collector Emitter Saturation Voltage :

2.74V

Height :

20.701mm

Max Power Dissipation :

160W

Packaging :

Bulk

Td (on/off) @ 25°C :

30ns/200ns

Power Dissipation :

160W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

94nC

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Gate-Emitter Voltage-Max :

20V

Width :

5.3086mm

Package / Case :

TO-247-3

Turn On Time :

53 ns

Turn Off Time-Nom (toff) :

1200 ns

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Transistor Application :

Motor Control

Rise Time :

22ns

Voltage - Collector Emitter Breakdown (Max) :

1200V

Number of Elements :

1

ECCN Code :

EAR99

Mount :

Through Hole

Test Condition :

960V, 15A, 10 Ω, 15V

Length :

15.875mm

JEDEC-95 Code :

TO-247AC

Vce(on) (Max) @ Vge, Ic :

3.4V @ 15V, 15A

Number of Terminations :

3

Transistor Element Material :

SILICON

Input Type :

Standard

REACH SVHC :

No SVHC

Max Collector Current :

30A

Switching Energy :

730μJ (on), 1.66mJ (off)

Gate-Emitter Thr Voltage-Max :

6V

Published :

2004

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

1.2kV

Current - Collector Pulsed (Icm) :

60A

Additional Feature :

LOW CONDUCTION LOSS