IRG4PH40KDPBF
- Mfr.Part #
- IRG4PH40KDPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 30A 160W TO247AC
- Stock
- 11,572
- In Stock :
- 11,572
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Max Collector Current :
- 30A
- Number of Pins :
- 3
- Vce(on) (Max) @ Vge, Ic :
- 3.4V @ 15V, 15A
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-247AC
- Reverse Recovery Time :
- 63 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Gate-Emitter Thr Voltage-Max :
- 3V
- Gate Charge :
- 94nC
- Case Connection :
- COLLECTOR
- Test Condition :
- 800V, 15A, 10 Ω, 15V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Additional Feature :
- LOW CONDUCTION LOSS
- Turn On Delay Time :
- 50 ns
- Input Type :
- Standard
- Voltage - Rated DC :
- 1.2kV
- Rise Time :
- 31ns
- Width :
- 5.3mm
- Lead Free :
- Lead Free
- Turn Off Time-Nom (toff) :
- 730 ns
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 20.3mm
- Collector Emitter Voltage (VCEO) :
- 3.4V
- Transistor Application :
- Motor Control
- Length :
- 15.875mm
- Switching Energy :
- 1.31mJ (on), 1.12mJ (off)
- Current Rating :
- 30A
- Radiation Hardening :
- No
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Gate-Emitter Voltage-Max :
- 20V
- Published :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 160W
- Package / Case :
- TO-247-3
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 250
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 96 ns
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Turn On Time :
- 82 ns
- JESD-609 Code :
- e3
- Power Dissipation :
- 160W
- Packaging :
- Tube
- Factory Lead Time :
- 14 Weeks
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Current - Collector Pulsed (Icm) :
- 60A
- Collector Emitter Saturation Voltage :
- 3.4V
- Td (on/off) @ 25°C :
- 50ns/96ns
- Mount :
- Through Hole
- Datasheets
- IRG4PH40KDPBF

IRG4PH40KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PH40KDPBF IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. IRGP4263DPBF MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT that works between 10 and 600 volts. Infineon Technologies IRGP4263DPBF half-bridge gate driver is used in isolated dc-to-dc power supply modules, solar inverters that require high isolation voltage and long-term dependability.
IRG4PH40KDPBF Features
Floating channel designed for bootstrap operation
Undervoltage lockout
Combines low conduction losses with high switching speed
Tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with ultrafast, ultrasoft recovery antiparallel diodes
IRG4PH40KDPBF Applications
Light vehicles
Power Management (SMPS)
Reference Design
Power tools
Robotics
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