IRG4PH40KDPBF
- Mfr.Part #
- IRG4PH40KDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SHORT CIRCUIT RATED ULTRAFAST IG
- Stock
- 4,220
- In Stock :
- 4,220
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Input Type :
- Standard
- Number of Elements :
- 1
- Transistor Application :
- Motor Control
- Collector Emitter Voltage (VCEO) :
- 3.4V
- JEDEC-95 Code :
- TO-247AC
- Voltage - Rated DC :
- 1.2kV
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Collector Emitter Saturation Voltage :
- 3.4V
- Number of Pins :
- 3
- Max Collector Current :
- 30A
- JESD-609 Code :
- e3
- Length :
- 15.875mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Turn On Delay Time :
- 50 ns
- Number of Terminations :
- 3
- Additional Feature :
- LOW CONDUCTION LOSS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Pulsed (Icm) :
- 60A
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Height :
- 20.3mm
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Turn Off Time-Nom (toff) :
- 730 ns
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Rise Time :
- 31ns
- Switching Energy :
- 1.31mJ (on), 1.12mJ (off)
- Peak Reflow Temperature (Cel) :
- 250
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Test Condition :
- 800V, 15A, 10 Ω, 15V
- Reverse Recovery Time :
- 63 ns
- Max Power Dissipation :
- 160W
- Current Rating :
- 30A
- Turn On Time :
- 82 ns
- Td (on/off) @ 25°C :
- 50ns/96ns
- Published :
- 2000
- Mounting Type :
- Through Hole
- Vce(on) (Max) @ Vge, Ic :
- 3.4V @ 15V, 15A
- Gate-Emitter Voltage-Max :
- 20V
- Width :
- 5.3mm
- Gate Charge :
- 94nC
- Mount :
- Through Hole
- Gate-Emitter Thr Voltage-Max :
- 3V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Element Configuration :
- Single
- Power Dissipation :
- 160W
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 96 ns
- Factory Lead Time :
- 14 Weeks
- Package / Case :
- TO-247-3
- Datasheets
- IRG4PH40KDPBF

IRG4PH40KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PH40KDPBF IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. IRGP4263DPBF MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT that works between 10 and 600 volts. Infineon Technologies IRGP4263DPBF half-bridge gate driver is used in isolated dc-to-dc power supply modules, solar inverters that require high isolation voltage and long-term dependability.
IRG4PH40KDPBF Features
Floating channel designed for bootstrap operation
Undervoltage lockout
Combines low conduction losses with high switching speed
Tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with ultrafast, ultrasoft recovery antiparallel diodes
IRG4PH40KDPBF Applications
Light vehicles
Power Management (SMPS)
Reference Design
Power tools
Robotics
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