IRG4PH30KPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

ECCN Code :

EAR99

Test Condition :

960V, 10A, 23 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Published :

2000

Collector Emitter Saturation Voltage :

3.1V

Additional Feature :

LOW CONDUCTION LOSS

Max Power Dissipation :

100W

Td (on/off) @ 25°C :

28ns/200ns

Collector Emitter Breakdown Voltage :

1.2kV

Gate-Emitter Thr Voltage-Max :

6V

Package / Case :

TO-247-3

Mount :

Through Hole

Mounting Type :

Through Hole

Number of Terminations :

3

Lead Free :

Lead Free

Switching Energy :

640μJ (on), 920μJ (off)

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

4.2V

Input Type :

Standard

Transistor Element Material :

SILICON

Factory Lead Time :

14 Weeks

Power Dissipation :

100W

Rise Time :

23ns

Turn Off Time-Nom (toff) :

640 ns

Operating Temperature :

-55°C~150°C TJ

Fall Time-Max (tf) :

170ns

Current - Collector Pulsed (Icm) :

40A

Radiation Hardening :

No

Max Collector Current :

20A

Turn On Time :

53 ns

Vce(on) (Max) @ Vge, Ic :

4.2V @ 15V, 10A

Element Configuration :

Single

Current Rating :

20A

Gate Charge :

53nC

Transistor Application :

Motor Control

Width :

5.3mm

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

1.2kV

Number of Pins :

3

Voltage - Collector Emitter Breakdown (Max) :

1200V

JEDEC-95 Code :

TO-247AC

REACH SVHC :

No SVHC

Length :

15.875mm

Case Connection :

COLLECTOR

Termination :

Through Hole

RoHS Status :

ROHS3 Compliant

Gate-Emitter Voltage-Max :

20V

Height :

20.3mm