IRG4PH30KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

100W

Radiation Hardening :

No

Gate-Emitter Thr Voltage-Max :

6V

Rise Time :

79ns

Voltage - Collector Emitter Breakdown (Max) :

1200V

Lead Free :

Lead Free

Number of Elements :

1

Max Collector Current :

20A

Turn On Time :

121 ns

Published :

2000

Test Condition :

800V, 10A, 23 Ω, 15V

Transistor Element Material :

SILICON

Mount :

Through Hole

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Pulsed (Icm) :

40A

Polarity/Channel Type :

N-Channel

Td (on/off) @ 25°C :

39ns/220ns

Collector Emitter Voltage (VCEO) :

4.2V

Switching Energy :

950μJ (on), 1.15mJ (off)

Voltage - Rated DC :

1.2kV

Packaging :

Tube

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

1.2kV

Fall Time-Max (tf) :

140ns

ECCN Code :

EAR99

Input Type :

Standard

Power Dissipation :

100W

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

220 ns

Vce(on) (Max) @ Vge, Ic :

4.2V @ 15V, 10A

Length :

15.87mm

Additional Feature :

LOW CONDUCTION LOSS

Termination :

Through Hole

Width :

5.3086mm

Current Rating :

20A

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Height :

20.7mm

Gate Charge :

53nC

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-247AC

Turn Off Time-Nom (toff) :

637 ns

Turn On Delay Time :

39 ns

Reverse Recovery Time :

50 ns

Collector Emitter Saturation Voltage :

3.1V

Number of Terminations :

3

Element Configuration :

Single

Transistor Application :

Motor Control

Gate-Emitter Voltage-Max :

20V

Package / Case :

TO-247-3