IRG4PH20KDPBF
- Mfr.Part #
- IRG4PH20KDPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IRG4PH20 - DISCRETE IGBT WITH AN
- Stock
- 39,161
- In Stock :
- 39,161
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Length :
- 15.87mm
- Published :
- 1998
- Current Rating :
- 11A
- Reverse Recovery Time :
- 51 ns
- Number of Terminations :
- 3
- Input Type :
- Standard
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Max Power Dissipation :
- 60W
- Max Collector Current :
- 11A
- Test Condition :
- 800V, 5A, 50 Ω, 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Power Dissipation :
- 60W
- ECCN Code :
- EAR99
- Package / Case :
- TO-247-3
- Radiation Hardening :
- No
- Gate-Emitter Voltage-Max :
- 20V
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Collector Emitter Voltage (VCEO) :
- 4.3V
- Width :
- 5.3086mm
- Case Connection :
- COLLECTOR
- Transistor Application :
- Motor Control
- Current - Collector Pulsed (Icm) :
- 22A
- Number of Pins :
- 3
- Gate Charge :
- 28nC
- Operating Temperature :
- -55°C~150°C TJ
- Turn Off Time-Nom (toff) :
- 730 ns
- Packaging :
- Bulk
- Additional Feature :
- LOW CONDUCTION LOSS
- Polarity/Channel Type :
- N-Channel
- Height :
- 20.7mm
- JEDEC-95 Code :
- TO-247AC
- Turn On Time :
- 80 ns
- Termination :
- Through Hole
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Vce(on) (Max) @ Vge, Ic :
- 4.3V @ 15V, 5A
- Rise Time :
- 30ns
- Collector Emitter Saturation Voltage :
- 3.17V
- Voltage - Rated DC :
- 1.2kV
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 14 Weeks
- Switching Energy :
- 620μJ (on), 300μJ (off)
- Td (on/off) @ 25°C :
- 50ns/100ns
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Datasheets
- IRG4PH20KDPBF

IRG4PH20KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PH20KDPBF Description
IRG4PH20KDPBF transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG4PH20KDPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
IRG4PH20KDPBF Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG4PH20KDPBF Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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