IRG4PC50UPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Height :

20.3mm

Lead Free :

Contains Lead, Lead Free

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Voltage (VCEO) :

2V

Package / Case :

TO-247-3

Test Condition :

480V, 27A, 5 Ω, 15V

Turn-Off Delay Time :

170 ns

Transistor Element Material :

SILICON

Number of Elements :

1

Max Power Dissipation :

200W

Current - Collector Pulsed (Icm) :

220A

Radiation Hardening :

No

Turn On Delay Time :

32 ns

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 27A

REACH SVHC :

No SVHC

Max Collector Current :

55A

Mount :

Through Hole

ECCN Code :

EAR99

Voltage - Rated DC :

600V

Length :

15.875mm

Transistor Application :

POWER CONTROL

Number of Pins :

3

Current Rating :

55A

Rise Time :

20ns

Power Dissipation :

200W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Element Configuration :

Single

Factory Lead Time :

14 Weeks

Input Type :

Standard

Turn On Time :

54 ns

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-247AC

Case Connection :

COLLECTOR

Switching Energy :

120μJ (on), 540μJ (off)

Width :

5.3mm

Operating Temperature :

-55°C~150°C TJ

Input Capacitance :

4nF

Gate-Emitter Thr Voltage-Max :

6V

Td (on/off) @ 25°C :

32ns/170ns

Termination :

Through Hole

Gate-Emitter Voltage-Max :

20V

Packaging :

Bulk

Gate Charge :

180nC

Number of Terminations :

3

Published :

2001

Collector Emitter Saturation Voltage :

2V

RoHS Status :

ROHS3 Compliant

Turn Off Time-Nom (toff) :

350 ns