IRG4PC50UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

2V

Switching Energy :

990μJ (on), 590μJ (off)

Length :

15.87mm

Max Junction Temperature (Tj) :

150°C

Test Condition :

480V, 27A, 5 Ω, 15V

ECCN Code :

EAR99

Turn On Delay Time :

46 ns

Mounting Type :

Through Hole

Rise Time :

25ns

Reverse Recovery Time :

50 ns

Turn On Time :

71 ns

Collector Emitter Breakdown Voltage :

600V

Max Power Dissipation :

200W

Turn-Off Delay Time :

140 ns

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-247-3

Input Capacitance :

4nF

Gate Charge :

180nC

JEDEC-95 Code :

TO-247AC

Factory Lead Time :

14 Weeks

Polarity/Channel Type :

N-Channel

Radiation Hardening :

No

Number of Pins :

3

Number of Elements :

1

Turn Off Time-Nom (toff) :

370 ns

Voltage - Rated DC :

600V

Termination :

Through Hole

Continuous Collector Current :

55A

Current Rating :

55A

REACH SVHC :

No SVHC

Td (on/off) @ 25°C :

46ns/140ns

Collector Emitter Voltage (VCEO) :

600V

Number of Terminations :

3

Published :

2001

Weight :

38.000013g

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 27A

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Height :

24.99mm

Element Configuration :

Single

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

220A

Transistor Application :

POWER CONTROL

Case Connection :

COLLECTOR

Width :

5.3086mm

Additional Feature :

ULTRA FAST SOFT RECOVERY

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead, Lead Free

Gate-Emitter Voltage-Max :

20V

Input Type :

Standard

Gate-Emitter Thr Voltage-Max :

6V

Max Collector Current :

55A

Power Dissipation :

200W

Mount :

Through Hole