IRG4PC50UD-MP
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- Mfr.Part #
- IRG4PC50UD-MP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 55A 200W TO247AC
- Stock
- 23,537
- In Stock ：
- 23,537
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Published :
- 2000
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Power - Max :
- 200W
- Mount :
- Through Hole
- Max Operating Temperature :
- 150°C
- Input Type :
- Standard
- Collector Emitter Breakdown Voltage :
- 600V
- Max Collector Current :
- 55A
- Gate Charge :
- 270nC
- Min Operating Temperature :
- -55°C
- Element Configuration :
- Single
- Factory Lead Time :
- 20 Weeks
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-247-3
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 2V
- Current - Collector (Ic) (Max) :
- 55A
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Series :
- HEXFRED®
- Max Power Dissipation :
- 200W
- Reverse Recovery Time :
- 75 ns
- Packaging :
- Bulk
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 27A
- Supplier Device Package :
- TO-247AC
- Current - Collector Pulsed (Icm) :
- 220A
- Datasheets
- IRG4PC50UD-MP
IRG4PC50UD-MP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PC50UD-MP Description
IRG4PC50UD-MP is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for high operating up to 8-40 kHz in hard switching, ＞200 kHz in resonant mode. As a Generation 4 IGBT, it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4PC50UD-MP IGBT ensures lower losses than MOSFET's conduction and Diode losses.
IRG4PC50UD-MP Features
Industry-standard TO-247AC packages
Extremely tight Vce(on) distribution
Tighter parameter distribution
Highest efficiencies available
IRG4PC50UD-MP Applications
Industrial motor drive
Solar inverters
Welding
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