IRG4PC50UD-EPBF
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- Mfr.Part #
- IRG4PC50UD-EPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 55A 200W TO247-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Termination :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Td (on/off) @ 25°C :
- 46ns/140ns
- Height :
- 20.7mm
- Input Type :
- Standard
- Voltage - Rated DC :
- 600V
- Collector Emitter Voltage (VCEO) :
- 2V
- Current - Collector Pulsed (Icm) :
- 220A
- Published :
- 2001
- Packaging :
- Bulk
- Package / Case :
- TO-247-3
- Gate Charge :
- 180nC
- Reverse Recovery Time :
- 50 ns
- Max Collector Current :
- 55A
- Collector Emitter Saturation Voltage :
- 2V
- Switching Energy :
- 990μJ (on), 590μJ (off)
- Width :
- 5.3086mm
- RoHS Status :
- RoHS Compliant
- Factory Lead Time :
- 14 Weeks
- Max Power Dissipation :
- 200W
- Number of Pins :
- 3
- Rise Time :
- 25ns
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 600V
- Lead Free :
- Lead Free
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 27A
- Weight :
- 38.000013g
- Test Condition :
- 480V, 27A, 5 Ω, 15V
- Mounting Type :
- Through Hole
- Power Dissipation :
- 200W
- Current Rating :
- 55A
- Length :
- 15.87mm
- Mount :
- Through Hole
- Datasheets
- IRG4PC50UD-EPBF
IRG4PC50UD-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PC50UD-EPBF Description
IRG4PC50UD-EPBF is a 600v insulated gate bipolar transistor with an ultrafast soft recovery diode. Generation 4 IGBTs offer the highest efficiencies available. IGBT's optimized for specific application conditions. HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing. IRG4PC50UD-EPBF is designed as a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs.
IRG4PC50UD-EPBF Features
Voltage - Collector Emitter Breakdown (Max): 600 V
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
Generation 3
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Vce(on) (Max) @ Vge, Ic: 2 V
Power - Max:200 W
Switching Energy: 0.99 mJ (on), 0.59 mJ (off)
Input Type: Standard
Gate Charge: 90nC
Td (on/off) @ 25°C: 46 ns/140 ns
Operating Temperature: -55°C to 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC (TO-247-3)
IRG4PC50UD-EPBF Applications
Automotive
Hybrid, electric & powertrain systems
Communications equipment
Datacom module
Enterprise systems
Enterprise projectors
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