IRG4PC50SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

REACH SVHC :

No SVHC

Max Power Dissipation :

200W

Package / Case :

TO-247-3

Packaging :

Bulk

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Power Dissipation :

200W

Case Connection :

COLLECTOR

Input Type :

Standard

Lead Free :

Lead Free

Factory Lead Time :

14 Weeks

Current Rating :

70A

Collector Emitter Saturation Voltage :

1.36V

Fall Time-Max (tf) :

600ns

Max Collector Current :

70A

JESD-609 Code :

e3

Switching Energy :

720μJ (on), 8.27mJ (off)

Length :

15.875mm

Rise Time :

30ns

Peak Reflow Temperature (Cel) :

250

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Gate Charge :

180nC

ECCN Code :

EAR99

Td (on/off) @ 25°C :

33ns/650ns

Width :

5.3mm

Number of Terminations :

3

Turn On Delay Time :

33 ns

Turn On Time :

62 ns

Mounting Type :

Through Hole

Mount :

Through Hole

Voltage - Rated DC :

600V

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

1700 ns

Test Condition :

480V, 41A, 5 Ω, 15V

Polarity/Channel Type :

N-Channel

Gate-Emitter Voltage-Max :

20V

Radiation Hardening :

No

Height :

20.2946mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

600V

Current - Collector Pulsed (Icm) :

140A

Vce(on) (Max) @ Vge, Ic :

1.36V @ 15V, 41A

JEDEC-95 Code :

TO-247AC

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Element Configuration :

Dual

Gate-Emitter Thr Voltage-Max :

6V

Turn-Off Delay Time :

650 ns

Published :

2000

Collector Emitter Voltage (VCEO) :

1.36V

Number of Elements :

1