IRG4PC50SDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Max Collector Current :

70A

Collector Emitter Saturation Voltage :

1.36V

Time@Peak Reflow Temperature-Max (s) :

30

Reverse Recovery Time :

50 ns

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

980 ns

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

600V

Factory Lead Time :

52 Weeks

Case Connection :

COLLECTOR

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation :

200W

Published :

2004

Turn Off Time-Nom (toff) :

1700 ns

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSFM-T3

Vce(on) (Max) @ Vge, Ic :

1.36V @ 15V, 41A

Peak Reflow Temperature (Cel) :

250

Input Type :

Standard

Package / Case :

TO-247-3

Switching Energy :

720μJ (on), 8.27mJ (off)

JESD-609 Code :

e3

Mount :

Through Hole

Turn On Time :

62 ns

JEDEC-95 Code :

TO-247AC

Number of Elements :

1

Current - Collector Pulsed (Icm) :

140A

Number of Terminations :

3

Max Power Dissipation :

200W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

33 ns

Gate Charge :

180nC

Operating Temperature :

-55°C~150°C TJ

Td (on/off) @ 25°C :

33ns/650ns

Packaging :

Tube

Transistor Element Material :

SILICON

Test Condition :

480V, 41A, 5 Ω, 15V

Collector Emitter Voltage (VCEO) :

1.36V

Mounting Type :

Through Hole