IRG4PC50KPBF
- Mfr.Part #
- IRG4PC50KPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- SHORT CIRCUIT RATED ULTRAFAST IG
- Stock
- 18,663
- In Stock :
- 18,663
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Length :
- 15.875mm
- Mount :
- Through Hole
- Factory Lead Time :
- 14 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-247-3
- Td (on/off) @ 25°C :
- 38ns/160ns
- Fall Time-Max (tf) :
- 120ns
- Number of Pins :
- 3
- Gate Charge :
- 200nC
- Gate-Emitter Thr Voltage-Max :
- 6V
- Voltage - Rated DC :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Test Condition :
- 480V, 30A, 5 Ω, 15V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Max Collector Current :
- 52A
- Width :
- 5.3mm
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Turn On Time :
- 72 ns
- Max Power Dissipation :
- 200W
- Peak Reflow Temperature (Cel) :
- 250
- REACH SVHC :
- No SVHC
- Rise Time :
- 34ns
- Turn Off Time-Nom (toff) :
- 430 ns
- Polarity/Channel Type :
- N-Channel
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-247AC
- Switching Energy :
- 490μJ (on), 680μJ (off)
- Height :
- 20.3mm
- Turn On Delay Time :
- 38 ns
- Input Type :
- Standard
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 1.84V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Published :
- 2000
- Collector Emitter Breakdown Voltage :
- 600V
- Power Dissipation :
- 200W
- Turn-Off Delay Time :
- 160 ns
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Gate-Emitter Voltage-Max :
- 20V
- Transistor Application :
- POWER CONTROL
- Current - Collector Pulsed (Icm) :
- 104A
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Number of Terminations :
- 3
- Additional Feature :
- LOW CONDUCTION LOSS
- Packaging :
- Bulk
- Radiation Hardening :
- No
- Current Rating :
- 52A
- Mounting Type :
- Through Hole
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 30A
- Datasheets
- IRG4PC50KPBF

IRG4PC50KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PC50KPBF Description
An INSULATED GATE BIPOLAR TRANSISTOR is IRG4PC50KPBF.
IRG4PC50KPBF Features
?Low conduction losses combined with quick switching
?Compared to earlier generations, the most recent design offers tighter parameter dispersion and more efficiency.
?Lead-Free
IRG4PC50KPBF Applications
Switching applications
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