IRG4PC50KPBF
- Mfr.Part #
- IRG4PC50KPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 52A 200W TO247AC
- Stock
- 25,020
- In Stock :
- 25,020
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Width :
- 5.3mm
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Turn On Time :
- 72 ns
- Number of Elements :
- 1
- Package / Case :
- TO-247-3
- Voltage - Rated DC :
- 600V
- Lead Free :
- Lead Free
- Power Dissipation :
- 200W
- Max Power Dissipation :
- 200W
- Radiation Hardening :
- No
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 30A
- ECCN Code :
- EAR99
- Turn Off Time-Nom (toff) :
- 430 ns
- Test Condition :
- 480V, 30A, 5 Ω, 15V
- Switching Energy :
- 490μJ (on), 680μJ (off)
- Transistor Element Material :
- SILICON
- Length :
- 15.875mm
- Transistor Application :
- POWER CONTROL
- Packaging :
- Bulk
- Height :
- 20.3mm
- Gate Charge :
- 200nC
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Td (on/off) @ 25°C :
- 38ns/160ns
- Collector Emitter Breakdown Voltage :
- 600V
- REACH SVHC :
- No SVHC
- Gate-Emitter Voltage-Max :
- 20V
- Gate-Emitter Thr Voltage-Max :
- 6V
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 1.84V
- Case Connection :
- COLLECTOR
- Rise Time :
- 34ns
- Input Type :
- Standard
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 38 ns
- Current Rating :
- 52A
- Fall Time-Max (tf) :
- 120ns
- Turn-Off Delay Time :
- 160 ns
- Max Collector Current :
- 52A
- Peak Reflow Temperature (Cel) :
- 250
- Mounting Type :
- Through Hole
- Published :
- 2000
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 14 Weeks
- Additional Feature :
- LOW CONDUCTION LOSS
- JEDEC-95 Code :
- TO-247AC
- Current - Collector Pulsed (Icm) :
- 104A
- Datasheets
- IRG4PC50KPBF

IRG4PC50KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PC50KPBF Description
An INSULATED GATE BIPOLAR TRANSISTOR is IRG4PC50KPBF.
IRG4PC50KPBF Features
?Low conduction losses combined with quick switching
?Compared to earlier generations, the most recent design offers tighter parameter dispersion and more efficiency.
?Lead-Free
IRG4PC50KPBF Applications
Switching applications
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