IRG4PC50KPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Packaging :

Bulk

Collector Emitter Breakdown Voltage :

600V

Additional Feature :

LOW CONDUCTION LOSS

Published :

2000

Number of Terminations :

3

Input Type :

Standard

Length :

15.875mm

Voltage - Rated DC :

600V

Turn On Delay Time :

38 ns

REACH SVHC :

No SVHC

Gate-Emitter Voltage-Max :

20V

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 30A

Td (on/off) @ 25°C :

38ns/160ns

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Turn Off Time-Nom (toff) :

430 ns

Number of Elements :

1

Switching Energy :

490μJ (on), 680μJ (off)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Element Configuration :

Single

Rise Time :

34ns

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

POWER CONTROL

Turn-Off Delay Time :

160 ns

Current Rating :

52A

JEDEC-95 Code :

TO-247AC

Power Dissipation :

200W

Max Power Dissipation :

200W

Height :

20.3mm

Width :

5.3mm

Test Condition :

480V, 30A, 5 Ω, 15V

Radiation Hardening :

No

Mount :

Through Hole

Gate-Emitter Thr Voltage-Max :

6V

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

1.84V

Gate Charge :

200nC

Peak Reflow Temperature (Cel) :

250

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

2.2V

Mounting Type :

Through Hole

Polarity/Channel Type :

N-Channel

Turn On Time :

72 ns

Max Collector Current :

52A

Current - Collector Pulsed (Icm) :

104A

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

14 Weeks

JESD-609 Code :

e3

Package / Case :

TO-247-3

Fall Time-Max (tf) :

120ns

Number of Pins :

3