IRG4PC50KDPBF
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- Mfr.Part #
- IRG4PC50KDPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 52A 200W TO247AC
- Stock
- 9,139
- In Stock ：
- 9,139
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Width :
- 5.3mm
- Packaging :
- Tray
- Collector Emitter Breakdown Voltage :
- 600V
- Current - Collector Pulsed (Icm) :
- 104A
- Rise Time :
- 49ns
- Case Connection :
- COLLECTOR
- Mounting Type :
- Through Hole
- Gate-Emitter Voltage-Max :
- 20V
- Collector Emitter Saturation Voltage :
- 1.84V
- Number of Pins :
- 3
- Td (on/off) @ 25°C :
- 63ns/150ns
- Voltage - Rated DC :
- 600V
- JEDEC-95 Code :
- TO-247AC
- Height :
- 20.3mm
- Number of Elements :
- 1
- Turn On Delay Time :
- 63 ns
- Number of Terminations :
- 3
- Length :
- 15.875mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 2.2V
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Termination :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Reverse Recovery Time :
- 50 ns
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 1998
- Gate Charge :
- 200nC
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Max Collector Current :
- 52A
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 200W
- Gate-Emitter Thr Voltage-Max :
- 6V
- Turn Off Time-Nom (toff) :
- 480 ns
- Radiation Hardening :
- No
- Turn On Time :
- 107 ns
- Current Rating :
- 52A
- Turn-Off Delay Time :
- 150 ns
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 30A
- Package / Case :
- TO-247-3
- Transistor Application :
- POWER CONTROL
- Test Condition :
- 480V, 30A, 5 Ω, 15V
- Input Type :
- Standard
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 104W
- Factory Lead Time :
- 14 Weeks
- RoHS Status :
- ROHS3 Compliant
- Switching Energy :
- 1.61mJ (on), 840μJ (off)
- Datasheets
- IRG4PC50KDPBF
IRG4PC50KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PC50KDPBF Description
Bipolar transistor IRG4PC50KDPBF is a kind of semiconductor device which is usually used for amplification. The device can amplify analog or digital signals. It can also switch DC or be used as an oscillator. Physically, a bipolar transistor can amplify current, but it can also be connected to a circuit designed to amplify voltage or power.
IRG4PC50KDPBF Features
·UltraFast:Optimized for high operating
frequencies 8-40 kHz in hardswitching.>200 kHzin resonant mode
·Generation 4 IGBT design provides tighter
parameter distribution and higher efficiencythan Generation3
·IGBT co-packaged with HEXFREDTMultrafast ultra-soft-recovery anti-parallel diodes for use in bridge configurations
·lndustry standard TO-247AC package*Lead-Free
· Lead-free
IRG4PC50KDPBF Applications
Oscillator
bipolar transistor
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