IRG4PC50FDPBF
- Mfr.Part #
- IRG4PC50FDPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 70A 200W TO247AC
- Stock
- 100
- In Stock :
- 100
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1.6V
- Factory Lead Time :
- 14 Weeks
- JEDEC-95 Code :
- TO-247AC
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Turn On Time :
- 86 ns
- Packaging :
- Tray
- Current - Collector Pulsed (Icm) :
- 280A
- Max Power Dissipation :
- 200W
- Td (on/off) @ 25°C :
- 55ns/240ns
- Turn Off Time-Nom (toff) :
- 660 ns
- Rise Time :
- 25ns
- Vce(on) (Max) @ Vge, Ic :
- 1.6V @ 15V, 39A
- Published :
- 2001
- Input Type :
- Standard
- Reverse Recovery Time :
- 50 ns
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 70A
- Test Condition :
- 480V, 39A, 5 Ω, 15V
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Package / Case :
- TO-247-3
- Transistor Application :
- POWER CONTROL
- Switching Energy :
- 1.5mJ (on), 2.4mJ (off)
- Polarity/Channel Type :
- N-Channel
- Fall Time-Max (tf) :
- 210ns
- Height :
- 20.7mm
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 1.6V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 600V
- Transistor Element Material :
- SILICON
- Width :
- 5.3086mm
- Turn On Delay Time :
- 55 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Termination :
- Through Hole
- Number of Terminations :
- 3
- Power Dissipation :
- 200W
- Number of Elements :
- 1
- Length :
- 15.87mm
- Voltage - Rated DC :
- 600V
- Current Rating :
- 70A
- Turn-Off Delay Time :
- 240 ns
- Gate Charge :
- 190nC
- Datasheets
- IRG4PC50FDPBF

IRG4PC50FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PC50FDPBF Description
The Infineon IRG4PC50FDPBF is an insulated gate Bipolar Transistor with ultrafast soft recovery diode, optimized for medium operating frequencies. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
IRG4PC50FDPBF Features
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry standard TO-247AC package
Lead-Free
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
IRG4PC50FDPBF Applications
Motor Drive & Control
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