IRG4PC50FD-EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Package / Case :

TO-247-3

Input Type :

Standard

Mounting Type :

Through Hole

Turn Off Time-Nom (toff) :

660 ns

Radiation Hardening :

No

Number of Pins :

3

Collector Emitter Breakdown Voltage :

600V

Published :

2004

Power Dissipation :

200W

Packaging :

Tube

Additional Feature :

ULTRA FAST SOFT RECOVERY

Case Connection :

COLLECTOR

Mount :

Through Hole

Switching Energy :

1.5mJ (on), 2.4mJ (off)

Transistor Application :

POWER CONTROL

Max Power Dissipation :

200W

RoHS Status :

RoHS Compliant

Turn On Time :

86 ns

Td (on/off) @ 25°C :

55ns/240ns

Polarity/Channel Type :

N-Channel

Reverse Recovery Time :

50 ns

Pbfree Code :

yes

Test Condition :

480V, 39A, 5 Ω, 15V

Length :

15.875mm

Number of Terminations :

3

Element Configuration :

Single

Current - Collector Pulsed (Icm) :

280A

JEDEC-95 Code :

TO-247AD

Factory Lead Time :

22 Weeks

Number of Elements :

1

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

1.6V

Vce(on) (Max) @ Vge, Ic :

1.6V @ 15V, 39A

Collector Emitter Voltage (VCEO) :

1.6V

Max Collector Current :

70A

ECCN Code :

EAR99

Gate Charge :

190nC

Operating Temperature :

-55°C~150°C TJ

Width :

5.3086mm

Height :

20.701mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)