IRG4PC50F-EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Max Collector Current :

70A

Turn On Time :

52 ns

Collector Emitter Saturation Voltage :

1.45V

Published :

2008

Case Connection :

COLLECTOR

Radiation Hardening :

No

Gate Charge :

190nC

Package / Case :

TO-247-3

ECCN Code :

EAR99

Length :

15.875mm

Collector Emitter Voltage (VCEO) :

1.6V

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel

Turn Off Time-Nom (toff) :

620 ns

Collector Emitter Breakdown Voltage :

600V

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Max Power Dissipation :

200W

Current - Collector Pulsed (Icm) :

280A

Number of Pins :

3

Element Configuration :

Single

Input Type :

Standard

Power Dissipation :

200W

Turn On Delay Time :

31 ns

Height :

20.701mm

Factory Lead Time :

11 Weeks

Width :

5.3086mm

Vce(on) (Max) @ Vge, Ic :

1.6V @ 15V, 39A

Gate-Emitter Thr Voltage-Max :

6V

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-247AD

Switching Energy :

370μJ (on), 2.1mJ (off)

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Test Condition :

480V, 39A, 5 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Number of Elements :

1

Turn-Off Delay Time :

240 ns

Fall Time-Max (tf) :

190ns

Packaging :

Tube

Td (on/off) @ 25°C :

31ns/240ns