IRG4PC40WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate Charge :

98nC

Current - Collector (Ic) (Max) :

40A

Voltage - Collector Emitter Breakdown (Max) :

600V

Turn Off Time-Nom (toff) :

294 ns

Test Condition :

480V, 20A, 10 Ω, 15V

Number of Elements :

1

Transistor Element Material :

SILICON

Gate-Emitter Voltage-Max :

20V

Terminal Position :

Single

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

POWER CONTROL

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Turn On Time :

48 ns

Number of Terminations :

3

Packaging :

Tube

Fall Time-Max (tf) :

110ns

Power - Max :

160W

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-247AC

Package / Case :

TO-247-3

Td (on/off) @ 25°C :

27ns/100ns

Switching Energy :

110μJ (on), 230μJ (off)

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 20A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Pulsed (Icm) :

160A

Surface Mount :

No

Input Type :

Standard

Power Dissipation-Max (Abs) :

160W

Additional Feature :

LOW CONDUCTION LOSS

Published :

2004

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Mounting Type :

Through Hole

Configuration :

Single

Gate-Emitter Thr Voltage-Max :

6V