IRG4PC40UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Switching Energy :

710μJ (on), 350μJ (off)

Fall Time-Max (tf) :

120ns

Input Type :

Standard

Max Power Dissipation :

160W

Test Condition :

480V, 20A, 10 Ω, 15V

Height :

24.6mm

Number of Elements :

1

JEDEC-95 Code :

TO-247AC

Mount :

Through Hole

Gate-Emitter Thr Voltage-Max :

6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

POWER CONTROL

Gate-Emitter Voltage-Max :

20V

RoHS Status :

ROHS3 Compliant

Turn Off Time-Nom (toff) :

330 ns

Turn On Delay Time :

54 ns

Polarity/Channel Type :

N-Channel

Reverse Recovery Time :

42 ns

Collector Emitter Saturation Voltage :

2.15V

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Turn On Time :

92 ns

Power Dissipation :

160W

Gate Charge :

100nC

Packaging :

Bulk

Number of Terminations :

3

Continuous Collector Current :

40A

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

600V

Current - Collector Pulsed (Icm) :

160A

Current Rating :

40A

Max Collector Current :

40A

Element Configuration :

Single

Length :

15.875mm

Termination :

Through Hole

Width :

5.3mm

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 20A

REACH SVHC :

No SVHC

Number of Pins :

3

Rise Time :

57ns

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-247-3

Voltage - Rated DC :

600V

Max Junction Temperature (Tj) :

150°C

Turn-Off Delay Time :

110 ns

Td (on/off) @ 25°C :

54ns/110ns

Collector Emitter Voltage (VCEO) :

600V

Published :

1998