IRG4PC40KPBF
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- Mfr.Part #
- IRG4PC40KPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 42A 160W TO247AC
- Stock
- 15,674
- In Stock ：
- 15,674
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Transistor Application :
- POWER CONTROL
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 2.6V
- Vce(on) (Max) @ Vge, Ic :
- 2.6V @ 15V, 25A
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Test Condition :
- 480V, 25A, 10 Ω, 15V
- Packaging :
- Bulk
- Max Collector Current :
- 42A
- Height :
- 20.7mm
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 160W
- Published :
- 2000
- Mount :
- Through Hole
- Current Rating :
- 42A
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Fall Time-Max (tf) :
- 210ns
- Gate-Emitter Voltage-Max :
- 20V
- Input Type :
- Standard
- Power Dissipation :
- 160W
- Length :
- 15.87mm
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 14 Weeks
- Current - Collector Pulsed (Icm) :
- 84A
- Gate-Emitter Thr Voltage-Max :
- 6V
- Turn Off Time-Nom (toff) :
- 340 ns
- Switching Energy :
- 620μJ (on), 330μJ (off)
- Collector Emitter Breakdown Voltage :
- 600V
- Width :
- 5.3086mm
- Turn On Time :
- 48 ns
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-247-3
- Additional Feature :
- ULTRA FAST
- Collector Emitter Voltage (VCEO) :
- 2.6V
- Rise Time :
- 15ns
- RoHS Status :
- RoHS Compliant
- Td (on/off) @ 25°C :
- 30ns/140ns
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Gate Charge :
- 120nC
- Voltage - Rated DC :
- 600V
- JEDEC-95 Code :
- TO-247AC
- Datasheets
- IRG4PC40KPBF
IRG4PC40KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PC40KPBF Description
IRG4PC40KPBF is a 600V insulated gate bipolar transistor. The Insulated Gate Bipolar Transistor also called an IGBT for short, is something of a cross between a conventional Bipolar Junction Transistor, (BJT) and a Field Effect Transistor, (MOSFET) making it ideal as a semiconductor switching device. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4PC40KPBF is in the TO- 247AC package with 160W power dissipation.
IRG4PC40KPBF Features
Short Circuit Rated UItraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10μs @ 125°C, VGE = 15V
Generation 4 IGBT design provides higher efficiency than Generation 3
Industry-standard TO- 247AC package
Reverse Voltage Avalanche Energy: 15mJ
Lead-Free
IRG4PC40KPBF Applications
Automotive
Hybrid, electric & powertrain systems
Industrial
Power delivery
Enterprise systems
Enterprise projectors
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