IRG4PC30WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Gate Charge :

51nC

REACH SVHC :

No SVHC

Max Power Dissipation :

100W

Radiation Hardening :

No

Height :

20.2946mm

Termination :

Through Hole

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

TO-247AC

Element Configuration :

Dual

Turn On Time :

41 ns

Published :

2000

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Transistor Application :

POWER CONTROL

Current - Collector Pulsed (Icm) :

92A

Mount :

Through Hole

Terminal Position :

Single

Input Type :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate-Emitter Voltage-Max :

20V

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Thr Voltage-Max :

6V

Fall Time-Max (tf) :

100ns

Packaging :

Bulk

Max Collector Current :

23A

Switching Energy :

130µJ (on), 130µJ (off)

Width :

5.3mm

ECCN Code :

EAR99

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

300 ns

Length :

15.875mm

Number of Terminations :

3

Current Rating :

23A

Factory Lead Time :

14 Weeks

Number of Elements :

1

Weight :

38.000013g

Number of Pins :

3

Voltage - Rated DC :

600V

Collector Emitter Saturation Voltage :

2.7V

Case Connection :

COLLECTOR

Test Condition :

480V, 12A, 23 Ω, 15V

Collector Emitter Voltage (VCEO) :

2.7V

Additional Feature :

LOW CONDUCTION LOSS

Power Dissipation :

100W

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Td (on/off) @ 25°C :

25ns/99ns

Rise Time :

16ns