IRG4PC30WPBF

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Mfr.Part #
IRG4PC30WPBF
Manufacturer
International Rectifier
Package / Case
TO-247-3
Datasheet
Download
Description
IRG4PC30W - IGBT
Stock
8,754
In Stock :
8,754

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
REACH SVHC :
No SVHC
Number of Elements :
1
Height :
20.2946mm
Voltage - Rated DC :
600V
Terminal Position :
Single
ECCN Code :
EAR99
Current - Collector Pulsed (Icm) :
92A
Gate-Emitter Voltage-Max :
20V
Current Rating :
23A
RoHS Status :
RoHS Compliant
JEDEC-95 Code :
TO-247AC
Fall Time-Max (tf) :
100ns
Lead Free :
Lead Free
Transistor Application :
POWER CONTROL
Length :
15.875mm
Packaging :
Bulk
Published :
2000
Max Power Dissipation :
100W
Input Type :
Standard
Transistor Element Material :
SILICON
Mount :
Through Hole
Vce(on) (Max) @ Vge, Ic :
2.7V @ 15V, 12A
Weight :
38.000013g
Collector Emitter Breakdown Voltage :
600V
Width :
5.3mm
Factory Lead Time :
14 Weeks
Turn Off Time-Nom (toff) :
300 ns
Termination :
Through Hole
Max Collector Current :
23A
Operating Temperature :
-55°C~150°C TJ
Case Connection :
COLLECTOR
Mounting Type :
Through Hole
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
2.7V
Element Configuration :
Dual
Package / Case :
TO-247-3
Power Dissipation :
100W
Td (on/off) @ 25°C :
25ns/99ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
16ns
Gate Charge :
51nC
Number of Terminations :
3
Collector Emitter Saturation Voltage :
2.7V
Gate-Emitter Thr Voltage-Max :
6V
Polarity/Channel Type :
N-Channel
Radiation Hardening :
No
Test Condition :
480V, 12A, 23 Ω, 15V
Turn On Time :
41 ns
Additional Feature :
LOW CONDUCTION LOSS
Switching Energy :
130µJ (on), 130µJ (off)
Datasheets
IRG4PC30WPBF
Introducing Transistors - IGBTs - Single International Rectifier IRG4PC30WPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-247-3, Number of Terminations:3, IRG4PC30WPBF pinout, IRG4PC30WPBF datasheet PDF, IRG4PC30WPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRG4PC30WPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.



IRG4PC30WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

Description


The IRG4PC30WPBF is an Insulated Gate Bipolar Transistor (IGBT). An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.



Features


● 50% reduction of Eoff parameter

● Low IGBT conduction losses

● Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

● Lead-Free

● Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

● Industry-benchmark switching losses improve efficienty of all power supply topologies



Applications


● Switched-mode power supplies

● Traction motor control

● Induction heating

● AC and DC motor drives

● Solar inverters


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