IRG4PC30WPBF
- Mfr.Part #
- IRG4PC30WPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IRG4PC30W - IGBT
- Stock
- 8,754
- In Stock :
- 8,754
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Height :
- 20.2946mm
- Voltage - Rated DC :
- 600V
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Current - Collector Pulsed (Icm) :
- 92A
- Gate-Emitter Voltage-Max :
- 20V
- Current Rating :
- 23A
- RoHS Status :
- RoHS Compliant
- JEDEC-95 Code :
- TO-247AC
- Fall Time-Max (tf) :
- 100ns
- Lead Free :
- Lead Free
- Transistor Application :
- POWER CONTROL
- Length :
- 15.875mm
- Packaging :
- Bulk
- Published :
- 2000
- Max Power Dissipation :
- 100W
- Input Type :
- Standard
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 12A
- Weight :
- 38.000013g
- Collector Emitter Breakdown Voltage :
- 600V
- Width :
- 5.3mm
- Factory Lead Time :
- 14 Weeks
- Turn Off Time-Nom (toff) :
- 300 ns
- Termination :
- Through Hole
- Max Collector Current :
- 23A
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- COLLECTOR
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 2.7V
- Element Configuration :
- Dual
- Package / Case :
- TO-247-3
- Power Dissipation :
- 100W
- Td (on/off) @ 25°C :
- 25ns/99ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 16ns
- Gate Charge :
- 51nC
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 2.7V
- Gate-Emitter Thr Voltage-Max :
- 6V
- Polarity/Channel Type :
- N-Channel
- Radiation Hardening :
- No
- Test Condition :
- 480V, 12A, 23 Ω, 15V
- Turn On Time :
- 41 ns
- Additional Feature :
- LOW CONDUCTION LOSS
- Switching Energy :
- 130µJ (on), 130µJ (off)
- Datasheets
- IRG4PC30WPBF
IRG4PC30WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
Description
The IRG4PC30WPBF is an Insulated Gate Bipolar Transistor (IGBT). An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.
Features
● 50% reduction of Eoff parameter
● Low IGBT conduction losses
● Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
● Lead-Free
● Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
● Industry-benchmark switching losses improve efficienty of all power supply topologies
Applications
● Switched-mode power supplies
● Traction motor control
● Induction heating
● AC and DC motor drives
● Solar inverters
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