IRG4PC30UPBF

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Mfr.Part #
IRG4PC30UPBF
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 23A 100W TO247AC
Stock
6,240
In Stock :
6,240

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Collector Emitter Voltage (VCEO) :
2.1V
JEDEC-95 Code :
TO-247AC
Mount :
Through Hole
Gate-Emitter Thr Voltage-Max :
6V
Current - Collector Pulsed (Icm) :
92A
Mounting Type :
Through Hole
Element Configuration :
Single
Gate Charge :
50nC
REACH SVHC :
No SVHC
Package / Case :
TO-247-3
Height :
20.2946mm
Radiation Hardening :
No
Turn On Time :
33 ns
Test Condition :
480V, 12A, 23 Ω, 15V
Transistor Application :
POWER CONTROL
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Voltage - Rated DC :
600V
Length :
15.875mm
Switching Energy :
160μJ (on), 200μJ (off)
Fall Time-Max (tf) :
150ns
Number of Terminations :
3
Width :
5.3mm
Case Connection :
COLLECTOR
Published :
2000
Max Power Dissipation :
100W
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Current Rating :
23A
RoHS Status :
ROHS3 Compliant
Lead Free :
Contains Lead, Lead Free
Td (on/off) @ 25°C :
17ns/78ns
Max Collector Current :
23A
Power Dissipation :
100W
Turn Off Time-Nom (toff) :
320 ns
Packaging :
Bulk
Gate-Emitter Voltage-Max :
20V
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 12A
Transistor Element Material :
SILICON
Termination :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
600V
Collector Emitter Saturation Voltage :
2.1V
Input Type :
Standard
Rise Time :
9.6ns
Factory Lead Time :
14 Weeks
Number of Elements :
1
Datasheets
IRG4PC30UPBF
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4PC30UPBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IRG4PC30UPBF pinout, IRG4PC30UPBF datasheet PDF, IRG4PC30UPBF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4PC30UPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4PC30UPBF


IRG4PC30UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4PC30UPBF Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advance PowerTrench? process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.



IRG4PC30UPBF Features

UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching,>200

kHz in resonant mode

Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

lndustry standard TO-247AC package

 Lead-Free



IRG4PC30UPBF Benefits

- Generation 4 IGBT's offer highest efficiency available

-IGBT's optimized for specified application conditions

Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 lR IGBT's


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