IRG4PC30UPBF
- Mfr.Part #
- IRG4PC30UPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- ULTRAFAST SPEED IGBT
- Stock
- 6,240
- In Stock :
- 6,240
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Gate-Emitter Thr Voltage-Max :
- 6V
- Number of Pins :
- 3
- Published :
- 2000
- Turn On Time :
- 33 ns
- Rise Time :
- 9.6ns
- Switching Energy :
- 160μJ (on), 200μJ (off)
- Gate Charge :
- 50nC
- Factory Lead Time :
- 14 Weeks
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 600V
- ECCN Code :
- EAR99
- Length :
- 15.875mm
- Max Power Dissipation :
- 100W
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 12A
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Td (on/off) @ 25°C :
- 17ns/78ns
- Collector Emitter Saturation Voltage :
- 2.1V
- Package / Case :
- TO-247-3
- Test Condition :
- 480V, 12A, 23 Ω, 15V
- Current Rating :
- 23A
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-247AC
- Turn Off Time-Nom (toff) :
- 320 ns
- Case Connection :
- COLLECTOR
- Termination :
- Through Hole
- Input Type :
- Standard
- Transistor Application :
- POWER CONTROL
- Mount :
- Through Hole
- Current - Collector Pulsed (Icm) :
- 92A
- Polarity/Channel Type :
- N-Channel
- Gate-Emitter Voltage-Max :
- 20V
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Fall Time-Max (tf) :
- 150ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Power Dissipation :
- 100W
- Width :
- 5.3mm
- Max Collector Current :
- 23A
- Collector Emitter Breakdown Voltage :
- 600V
- Lead Free :
- Contains Lead, Lead Free
- Height :
- 20.2946mm
- Datasheets
- IRG4PC30UPBF

IRG4PC30UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRG4PC30UPBF Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advance PowerTrench? process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
IRG4PC30UPBF Features
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching,>200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
lndustry standard TO-247AC package
Lead-Free
IRG4PC30UPBF Benefits
- Generation 4 IGBT's offer highest efficiency available
-IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 lR IGBT's
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