IRG4PC30UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Gate-Emitter Thr Voltage-Max :

6V

Gate-Emitter Voltage-Max :

20V

Power Dissipation :

100W

Number of Terminations :

3

Max Power Dissipation :

100W

Transistor Application :

POWER CONTROL

Turn-Off Delay Time :

91 ns

Additional Feature :

ULTRA FAST SOFT RECOVERY

Collector Emitter Breakdown Voltage :

600V

Input Type :

Standard

Radiation Hardening :

No

Turn Off Time-Nom (toff) :

300 ns

Turn On Delay Time :

40 ns

Turn On Time :

62 ns

Current Rating :

23A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

50nC

Max Collector Current :

23A

JEDEC-95 Code :

TO-247AC

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Published :

2000

Test Condition :

480V, 12A, 23 Ω, 15V

Current - Collector Pulsed (Icm) :

92A

Mount :

Through Hole

Reverse Recovery Time :

42 ns

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Rise Time :

21ns

Collector Emitter Saturation Voltage :

2.1V

Transistor Element Material :

SILICON

Termination :

Through Hole

Number of Pins :

3

Td (on/off) @ 25°C :

40ns/91ns

Collector Emitter Voltage (VCEO) :

2.1V

Length :

15.875mm

Case Connection :

COLLECTOR

Lead Free :

Lead Free

Voltage - Rated DC :

600V

Package / Case :

TO-247-3

ECCN Code :

EAR99

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 12A

Element Configuration :

Single

Width :

5.3mm

Height :

20.3mm

Mounting Type :

Through Hole

Factory Lead Time :

14 Weeks

Switching Energy :

380μJ (on), 160μJ (off)

RoHS Status :

ROHS3 Compliant