IRG4PC30SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Height :

20.2946mm

Turn On Time :

40 ns

Factory Lead Time :

14 Weeks

Collector Emitter Breakdown Voltage :

600V

Gate Charge :

50nC

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Turn Off Time-Nom (toff) :

1550 ns

Current - Collector Pulsed (Icm) :

68A

Number of Elements :

1

Gate-Emitter Thr Voltage-Max :

6V

ECCN Code :

EAR99

Packaging :

Bulk

Element Configuration :

Dual

Voltage - Rated DC :

600V

Max Power Dissipation :

100W

Collector Emitter Voltage (VCEO) :

1.6V

Case Connection :

COLLECTOR

JEDEC-95 Code :

TO-247AC

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

1.6V @ 15V, 18A

Power Dissipation :

100W

Number of Terminations :

3

Switching Energy :

260μJ (on), 3.45mJ (off)

Max Collector Current :

34A

Width :

5.3086mm

Collector Emitter Saturation Voltage :

1.6V

Fall Time-Max (tf) :

590ns

Length :

15.875mm

Terminal Position :

Single

REACH SVHC :

No SVHC

Weight :

38.000013g

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

POWER CONTROL

Mount :

Through Hole

Package / Case :

TO-247-3

Published :

2003

Mounting Type :

Through Hole

Lead Free :

Lead Free

Test Condition :

480V, 18A, 23 Ω, 15V

Input Type :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Td (on/off) @ 25°C :

22ns/540ns

Gate-Emitter Voltage-Max :

20V

Rise Time :

19ns

Current Rating :

34A