IRG4PC30FPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 17A

Packaging :

Bulk

Fall Time-Max (tf) :

270ns

Rise Time :

15ns

Element Configuration :

Dual

REACH SVHC :

No SVHC

Published :

2000

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

Length :

15.875mm

Mount :

Through Hole

Switching Energy :

230μJ (on), 1.18mJ (off)

Transistor Element Material :

SILICON

Turn On Time :

36 ns

Radiation Hardening :

No

Terminal Position :

Single

Turn Off Time-Nom (toff) :

640 ns

Current - Collector Pulsed (Icm) :

120A

Voltage - Rated DC :

600V

Height :

20.2946mm

JEDEC-95 Code :

TO-247AC

RoHS Status :

ROHS3 Compliant

Current Rating :

31A

ECCN Code :

EAR99

Number of Terminations :

3

Number of Elements :

1

Max Collector Current :

31A

Power Dissipation :

100W

Test Condition :

480V, 17A, 23 Ω, 15V

Case Connection :

COLLECTOR

Drain to Source Voltage (Vdss) :

250V

Transistor Application :

POWER CONTROL

Gate Charge :

51nC

Collector Emitter Saturation Voltage :

1.59V

Td (on/off) @ 25°C :

21ns/200ns

Number of Pins :

3

Max Dual Supply Voltage :

250V

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

600V

Mounting Type :

Through Hole

Max Forward Surge Current (Ifsm) :

31A

Factory Lead Time :

14 Weeks

Package / Case :

TO-247-3

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

1.8V

Width :

5.3mm

Max Power Dissipation :

100W