IRG4PC30FDPBF
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- Mfr.Part #
- IRG4PC30FDPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 31A 100W TO247AC
- Stock
- 1,904
- In Stock ：
- 1,904
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Gate-Emitter Voltage-Max :
- 20V
- Reverse Recovery Time :
- 42 ns
- Width :
- 5.3mm
- Gate Charge :
- 51nC
- JEDEC-95 Code :
- TO-247AC
- Turn On Delay Time :
- 42 ns
- Transistor Application :
- POWER CONTROL
- Number of Terminations :
- 3
- Continuous Collector Current :
- 31A
- Switching Energy :
- 630μJ (on), 1.39mJ (off)
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Length :
- 15.875mm
- Package / Case :
- TO-247-3
- Number of Pins :
- 3
- Max Collector Current :
- 31A
- Mounting Type :
- Through Hole
- Turn On Time :
- 69 ns
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 26ns
- Current Rating :
- 31A
- Max Power Dissipation :
- 100W
- Collector Emitter Breakdown Voltage :
- 600V
- Case Connection :
- COLLECTOR
- Additional Feature :
- FAST SWITCHING, ULTRA FAST SOFT RECOVERY
- Voltage - Rated DC :
- 600V
- Current - Collector Pulsed (Icm) :
- 120A
- Polarity/Channel Type :
- N-Channel
- Td (on/off) @ 25°C :
- 42ns/230ns
- Published :
- 2000
- Lead Free :
- Contains Lead, Lead Free
- Collector Emitter Voltage (VCEO) :
- 600V
- Power Dissipation :
- 100W
- Gate-Emitter Thr Voltage-Max :
- 6V
- Number of Elements :
- 1
- Turn Off Time-Nom (toff) :
- 620 ns
- Weight :
- 38.000013g
- Height :
- 24.99mm
- Max Junction Temperature (Tj) :
- 150°C
- Input Type :
- Standard
- Factory Lead Time :
- 14 Weeks
- Mount :
- Through Hole
- Test Condition :
- 480V, 17A, 23 Ω, 15V
- Collector Emitter Saturation Voltage :
- 1.99V
- Vce(on) (Max) @ Vge, Ic :
- 1.8V @ 15V, 17A
- Turn-Off Delay Time :
- 230 ns
- Datasheets
- IRG4PC30FDPBF
IRG4PC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
The IRG4PC30FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED? ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. The HEXFRED? diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
irg4pc30fdpbf Features
? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
? Industry standard TO-247AC package
? Lead-Free
irg4pc30fdpbf Applications
variable-frequency drives (VFDs) /electric cars /trains /variable-speed refrigerators /lamp ballasts /arc-welding machines /air conditioners.
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