IRG4IBC30WPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Max Collector Current :

17A

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Voltage - Rated DC :

600V

Radiation Hardening :

No

Factory Lead Time :

16 Weeks

Gate-Emitter Voltage-Max :

20V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Package / Case :

TO-220-3 Full Pack

Td (on/off) @ 25°C :

25ns/99ns

Max Power Dissipation :

45W

Packaging :

Tube

Gate Charge :

51nC

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

POWER CONTROL

Length :

10.6172mm

Collector Emitter Breakdown Voltage :

600V

Number of Elements :

1

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Width :

4.826mm

Collector Emitter Voltage (VCEO) :

2.7V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

16ns

Current Rating :

17A

Power Dissipation :

45W

Additional Feature :

LOW CONDUCTION LOSS

Turn On Time :

41 ns

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

2.1V

Published :

2004

Fall Time-Max (tf) :

100ns

Turn On Delay Time :

25 ns

Turn-Off Delay Time :

99 ns

Number of Terminations :

3

Lead Free :

Lead Free

Input Type :

Standard

Element Configuration :

Dual

Current - Collector Pulsed (Icm) :

92A

Mount :

Through Hole

Test Condition :

480V, 12A, 23 Ω, 15V

Gate-Emitter Thr Voltage-Max :

6V

Turn Off Time-Nom (toff) :

300 ns

Switching Energy :

130µJ (on), 130µJ (off)

Number of Pins :

3

Transistor Element Material :

SILICON

Case Connection :

Isolated

Height :

14.224mm

Polarity/Channel Type :

N-Channel