IRG4IBC30W

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Surface Mount :

No

Current - Collector (Ic) (Max) :

17A

Input Type :

Standard

Switching Energy :

130µJ (on), 130µJ (off)

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Case Connection :

Isolated

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Current - Collector Pulsed (Icm) :

92A

Gate Charge :

51nC

Published :

2000

Power - Max :

45W

Number of Elements :

1

Transistor Application :

POWER CONTROL

Td (on/off) @ 25°C :

25ns/99ns

RoHS Status :

Non-RoHS Compliant

Voltage - Collector Emitter Breakdown (Max) :

600V

Packaging :

Tube

Test Condition :

480V, 12A, 23 Ω, 15V

JESD-30 Code :

R-PSFM-T3

Turn Off Time-Nom (toff) :

300 ns

Configuration :

Single

Additional Feature :

LOW CONDUCTION LOSS

Operating Temperature :

-55°C~150°C TJ

Turn On Time :

41 ns

Package / Case :

TO-220-3 Full Pack

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)