IRG4IBC30UDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Gate-Emitter Voltage-Max :

20V

Number of Pins :

3

Height :

9.02mm

Turn Off Time-Nom (toff) :

300 ns

Length :

10.6172mm

Td (on/off) @ 25°C :

40ns/91ns

Gate Charge :

50nC

Number of Terminations :

3

Power Dissipation :

45W

Radiation Hardening :

No

Weight :

2.299997g

Case Connection :

Isolated

Input Type :

Standard

Termination :

Through Hole

Test Condition :

480V, 12A, 23 Ω, 15V

Mount :

Through Hole

Additional Feature :

ULTRA FAST SOFT RECOVERY

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Saturation Voltage :

1.95V

Max Collector Current :

17A

Turn On Time :

62 ns

Switching Energy :

380μJ (on), 160μJ (off)

Turn-Off Delay Time :

91 ns

Current Rating :

17A

Max Power Dissipation :

45W

Factory Lead Time :

16 Weeks

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Current - Collector Pulsed (Icm) :

68A

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Turn On Delay Time :

40 ns

Packaging :

Tube

Gate-Emitter Thr Voltage-Max :

6V

Reverse Recovery Time :

42 ns

Package / Case :

TO-220-3 Full Pack

Transistor Application :

POWER CONTROL

Voltage - Rated DC :

600V

JEDEC-95 Code :

TO-220AB

Published :

2000

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free

Width :

4.826mm

Collector Emitter Voltage (VCEO) :

2.1V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Rise Time :

21ns

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 12A