IRG4IBC30S

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Mfr.Part #
IRG4IBC30S
Manufacturer
Infineon Technologies
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
IGBT 600V 23.5A 45W TO220FP
Stock
34,318
In Stock :
34,318

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Vce(on) (Max) @ Vge, Ic :
1.6V @ 15V, 18A
Published :
2001
Td (on/off) @ 25°C :
22ns/540ns
Current - Collector (Ic) (Max) :
23.5A
Current - Collector Pulsed (Icm) :
68A
Turn Off Time-Nom (toff) :
1550 ns
Configuration :
Single
Voltage - Collector Emitter Breakdown (Max) :
600V
Package / Case :
TO-220-3 Full Pack
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn On Time :
40 ns
Test Condition :
480V, 18A, 23 Ω, 15V
JESD-30 Code :
R-PSFM-T3
Packaging :
Tube
Terminal Position :
Single
Number of Terminations :
3
Input Type :
Standard
Power - Max :
45W
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
Non-RoHS Compliant
Gate Charge :
50nC
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Switching Energy :
260μJ (on), 3.45mJ (off)
Case Connection :
Isolated
Surface Mount :
No
Number of Elements :
1
Datasheets
IRG4IBC30S
Introducing Transistors - IGBTs - Single Infineon Technologies IRG4IBC30S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, IRG4IBC30S pinout, IRG4IBC30S datasheet PDF, IRG4IBC30S amp .Beyond Transistors - IGBTs - Single Infineon Technologies IRG4IBC30S ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRG4IBC30S


IRG4IBC30S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRG4IBC30S Description


The IRG4IBC30S is an IGBT 600 V 23.5 A 45 W Through Hole TO-220AB Full-Pak. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.



IRG4IBC30S Features


  • Industry standard TO-220 Full-Pak

  • Lead-Free

  • Standard: Optimized for minimum saturation  voltage and low operating freqencies (<1 kHz)

  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation

  • High input impedance



IRG4IBC30S Applications


  • It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment and computers.

  • It is used in UPS (Uninterruptible Power Supply) system.

  • It is used in AC and DC motor drives offering speed control.

  • It is used in chopper and inverters.

  • It is used in solar inverters.


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