IRG4IBC30KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Reverse Recovery Time :

42 ns

Switching Energy :

600μJ (on), 580μJ (off)

Width :

4.826mm

Number of Terminations :

3

Turn-Off Delay Time :

160 ns

Transistor Application :

POWER CONTROL

Gate-Emitter Thr Voltage-Max :

6V

Turn Off Time-Nom (toff) :

370 ns

Power Dissipation :

45W

Collector Emitter Voltage (VCEO) :

2.7V

Voltage - Rated DC :

600V

Radiation Hardening :

No

Number of Elements :

1

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Turn On Time :

100 ns

Test Condition :

480V, 16A, 23 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Case Connection :

Isolated

Gate-Emitter Voltage-Max :

20V

Factory Lead Time :

16 Weeks

Package / Case :

TO-220-3 Full Pack

Collector Emitter Saturation Voltage :

2.7V

Td (on/off) @ 25°C :

60ns/160ns

Lead Free :

Lead Free

Additional Feature :

ULTRA FAST SOFT RECOVERY

Mounting Type :

Through Hole

Max Power Dissipation :

45W

Fall Time-Max (tf) :

120ns

Transistor Element Material :

SILICON

Rise Time :

42ns

Current - Collector Pulsed (Icm) :

34A

Height :

16.129mm

Turn On Delay Time :

60 ns

REACH SVHC :

No SVHC

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Max Collector Current :

17A

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Current Rating :

17A

Length :

10.7442mm

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 16A

Published :

2010

Gate Charge :

67nC

Collector Emitter Breakdown Voltage :

600V