IRG4IBC20W

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 6.5A

Configuration :

Single

Current - Collector Pulsed (Icm) :

52A

Polarity/Channel Type :

N-Channel

Published :

2000

Voltage - Collector Emitter Breakdown (Max) :

600V

Packaging :

Tube

Additional Feature :

LOW CONDUCTION LOSS

Package / Case :

TO-220-3 Full Pack

Test Condition :

480V, 6.5A, 50 Ω, 15V

Case Connection :

Isolated

Turn Off Time-Nom (toff) :

300 ns

Current - Collector (Ic) (Max) :

11.8A

Transistor Application :

POWER CONTROL

Number of Terminations :

3

Surface Mount :

No

Switching Energy :

60μJ (on), 80μJ (off)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Gate Charge :

26nC

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Td (on/off) @ 25°C :

22ns/110ns

Mounting Type :

Through Hole

Terminal Position :

Single

Input Type :

Standard

Turn On Time :

36 ns

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PSFM-T3

Power - Max :

34W